X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

Yow-Jon Lin, Chang Da Tsai, Yen Tang Lyu, Ching Ting Lee

研究成果: Article

47 引文 斯高帕斯(Scopus)

摘要

We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

原文English
頁(從 - 到)687-689
頁數3
期刊Applied Physics Letters
77
發行號5
DOIs
出版狀態Published - 2000 七月 31

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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