Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

C. H. Seieh, R. H. Horng, M. F. Huang, D. S. Wuu, W. C. Peng, S. J. Tsai, J. S. Liu

研究成果: Article

摘要

The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.

原文English
頁(從 - 到)854-855
頁數2
期刊Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
2
出版狀態Published - 2000 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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