Understanding nonpolar GaN growth through kinetic Wulff plots

Qian Sun, Christopher D. Yerino, Tsung Shine Ko, Yong Suk Cho, In Hwan Lee, Jung Han, Michael E. Coltrin

研究成果: Article同行評審

83 引文 斯高帕斯(Scopus)

摘要

In this paper we provide explanations to the complex growth phenomena of GaN heteroepitaxy on nonpolar orientations using the concept of kinetic Wulff plots (or v -plots). Quantitative mapping of kinetic Wulff plots in polar, semipolar, and nonpolar angles are achieved using a differential measurement technique from selective area growth. An accurate knowledge of the topography of kinetic Wulff plots serves as an important stepping stone toward model-based control of nonpolar GaN growth. Examples are illustrated to correlate growth dynamics based on the kinetic Wulff plots with commonly observed features, including anisotropic nucleation islands, highly striated surfaces, and pentagonal or triangular pits.

原文English
文章編號093523
期刊Journal of Applied Physics
104
發行號9
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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