Tunneling magnetoresistance of magnetic tunneling junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate

Min Fong Shu, A. Canizo-Cabrera, Chih Cheng Hsu, C. C. Chen, Jong-Ching Wu, Simon C. Li, Chao Chen Yang, Te Ho Wu

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of Si O2 (20 nm) Ta (5 nm) Cu (20 nm) Ta (5 nm) NiFe (2 nm) Cu (5 nm) MnIr (10 nm) CoFe (4 nm) Al-O (1.5 nm) CoFe (4 nm) NiFe (20 nm) Ta (50 nm) was measured by conducting atomic force microscopy to obtain I-V curves. Tunnel magnetoresistance was characterized from these nonlinear I-V curves. MR values of 33.9%, 30.5%, 30.3%, and 28% were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively.

原文English
文章編號08R705
期刊Journal of Applied Physics
99
發行號8
DOIs
出版狀態Published - 2006 五月 25

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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