Tunneling magnetoresistance of magnetic tunneling junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate

Min Fong Shu, A. Canizo-Cabrera, Chih Cheng Hsu, C. C. Chen, Jong-Ching Wu, Simon C. Li, Chao Chen Yang, Te Ho Wu

研究成果: Article

1 引文 斯高帕斯(Scopus)


Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of Si O2 (20 nm) Ta (5 nm) Cu (20 nm) Ta (5 nm) NiFe (2 nm) Cu (5 nm) MnIr (10 nm) CoFe (4 nm) Al-O (1.5 nm) CoFe (4 nm) NiFe (20 nm) Ta (50 nm) was measured by conducting atomic force microscopy to obtain I-V curves. Tunnel magnetoresistance was characterized from these nonlinear I-V curves. MR values of 33.9%, 30.5%, 30.3%, and 28% were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively.

期刊Journal of Applied Physics
出版狀態Published - 2006 五月 25


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)