Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoOx capping layer that serves to the electron–phonon coupling modification is reported. For OTFTs with a MoOx front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoOx layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron–phonon coupling modification that results from the contribution of long-lifetime electron trapping.
|頁（從 - 到）||1205-1210|
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||Published - 2014 一月 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)