Tuning charge transport in pentacene thin-film transistors using the strain-induced electron–phonon coupling modification

Yow-Jon Lin, Hsing Cheng Chang, Day Shan Liu

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoOx capping layer that serves to the electron–phonon coupling modification is reported. For OTFTs with a MoOx front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoOx layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron–phonon coupling modification that results from the contribution of long-lifetime electron trapping.

原文English
頁(從 - 到)1205-1210
頁數6
期刊Applied Physics A: Materials Science and Processing
118
發行號4
DOIs
出版狀態Published - 2014 一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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