True dipole at the indium tin oxide/organic semiconductor interface

Yow Jon Lin, Jia Huang Hong, Yi Chun Lien, Bei Yuan Liu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

There has been long-standing interest in the development of organic optoelectronic devices. However, the authors find that the previously reported interface-dipole calculations seem to be inaccurate, owing to a persistent neglect of the induced band bending of indium tin oxide (ITO) by coating of organic semiconductors on ITO. In this study, the correlation between the induced band bending of ITO in the presence of organic semiconductors on ITO and the dipole at the interface was examined.

原文English
文章編號262110
期刊Applied Physics Letters
89
發行號26
DOIs
出版狀態Published - 2006 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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