Tin-Selenium Secondary Phase Etching of Cu2ZnSnSe4: A Selective Removal Route to Improve Solar Cell Efficiency

Yi Cheng Lin, Zih Yi Su

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

In this study, we removed type II Sn-Se secondary phases from Cu2ZnSnSe4 (CZTSe) absorber surface via selective chemical etching and then examined the influence of this etching on the performances of solar cell devices. Experiment results indicate that the morphology of Sn-Se secondary phases are determined by the Ar gas flow rate (Sn/Se ratio) of the selenization process in the CZTSe absorber layer. Round or semicircular structures (type II) of Sn-Se secondary phases formed in films with a higher Ar gas flow rate (Sn/Se ratio) selenization process. We found that HNO3 with 3 HCl could remove type II Sn-Se secondary phases, thereby improving average device efficiency from 3.8% to 5.6%.

原文English
頁(從 - 到)6725-6729
頁數5
期刊ACS Applied Energy Materials
1
發行號12
DOIs
出版狀態Published - 2018 十二月 24

All Science Journal Classification (ASJC) codes

  • Chemical Engineering (miscellaneous)
  • Energy Engineering and Power Technology
  • Electrochemistry
  • Materials Chemistry
  • Electrical and Electronic Engineering

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