Three-dimension quantum confinement in InGaN/GaN nano-rods

Horng Shyang Chen, Dong Ming Yeh, G. Yen Chen, Yen Cheng Lu, C. C. Yang, Cen-Shawn Wu, C. D. Chen

研究成果: Conference contribution

摘要

Nano-rods of a few tens nm in size on InGaN/GaN quantum well structures are fabricated with e-beam lithography and dry etching. Theoretical calculations show significant quantum effects when the rod size is < 30 nm.

原文English
主出版物標題International Quantum Electronics Conference 2005
頁面141-142
頁數2
DOIs
出版狀態Published - 2005 十二月 1

出版系列

名字IQEC, International Quantum Electronics Conference Proceedings
2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • 引用此

    Chen, H. S., Yeh, D. M., Chen, G. Y., Lu, Y. C., Yang, C. C., Wu, C-S., & Chen, C. D. (2005). Three-dimension quantum confinement in InGaN/GaN nano-rods. 於 International Quantum Electronics Conference 2005 (頁 141-142). [1560852] (IQEC, International Quantum Electronics Conference Proceedings; 卷 2005). https://doi.org/10.1109/IQEC.2005.1560852