Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector

C. Y. Kung, S. L. Young, M. C. Kao, H. Z. Chen, J. H. Lin, H. H. Lin, Lance Horng, Y. T. Shih

研究成果: Conference contribution

5 引文 斯高帕斯(Scopus)

摘要

Well-defined Zn0.9Li0.1O nanorods were hydrothermally synthesized at the low temperature of 90°C on the sputtered ZnO seed layer in different thickness, 20 nm and 50 nm. The x-ray diffraction patterns of both samples with a single diffraction peak (002) showed the same wurtzite hexagonal structure. The length and diameter of the nanorods were both increased from 1.12 μm to 1.47 μm and 95 nm to 113 nm, respectively, while increasing the sputtered ZnO seed layer thickness from 20 nm to 50 nm. The optical properties were influenced by the presence of oxygen vacancies induced by Li doping in the Zn0.9Li0.1O nanorods. Besides, p-type ZnO-based semiconductor nanorods were obtained by the doping of Li into ZnO. Finally, the UV photodetectors with (p-Zn0.9Li 0.1O nanorods)/(n-Si subatrate) structure were also achieved. The I-V characteristics of the UV photodetector with p-ZnO:Li nanorod/n-Si structure were also measured. The UV illumination/dark current ratio of the photodetectors with different seeded layer, 20nm and 50nm, were also measured as 201% and 364%, respectively.

原文English
主出版物標題Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
頁面417-420
頁數4
DOIs
出版狀態Published - 2013 三月 13
事件2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
持續時間: 2013 一月 22013 一月 4

出版系列

名字Proceedings - Winter Simulation Conference
ISSN(列印)0891-7736

Other

Other2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
國家Singapore
城市Singapore
期間13-01-0213-01-04

All Science Journal Classification (ASJC) codes

  • Software
  • Modelling and Simulation
  • Computer Science Applications

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