The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.
|頁（從 - 到）||705-708|
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||Published - 2009 十一月 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)