The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process

Cheng Yao Huang, Chung En Tsay, Yu-Wu Wang

研究成果: Conference contribution

摘要

The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cmVvs and on/off current ratio over 105

原文English
主出版物標題22nd International Display Workshops, IDW 2015
發行者International Display Workshops
頁面636-638
頁數3
ISBN(電子)9781510845503
出版狀態Published - 2015 一月 1
事件22nd International Display Workshops, IDW 2015 - Otsu, Japan
持續時間: 2015 十二月 92015 十二月 11

出版系列

名字Proceedings of the International Display Workshops
2
ISSN(列印)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
國家Japan
城市Otsu
期間15-12-0915-12-11

    指紋

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

引用此

Huang, C. Y., Tsay, C. E., & Wang, Y-W. (2015). The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. 於 22nd International Display Workshops, IDW 2015 (頁 636-638). (Proceedings of the International Display Workshops; 卷 2). International Display Workshops.