The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping.

Nai Xiang He, Wei Xiang Chen, Wei An Chen, Shi Jie Chen, Yu-Wu Wang

研究成果: Conference contribution

摘要

We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility -2.4 cm2/Vs was achieved.

原文English
主出版物標題23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
發行者Society for Information Display
頁面905-908
頁數4
2
ISBN(電子)9781510845510
出版狀態Published - 2016 一月 1
事件23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
持續時間: 2016 十二月 72016 十二月 9

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
國家Japan
城市Fukuoka
期間16-12-0716-12-09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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