The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping.

Nai Xiang He; Wei Xiang Chen; Wei An Chen; Shi Jie Chen; Yu-Wu Wang

The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping.

Nai Xiang He, Wei Xiang Chen, Wei An Chen, Shi Jie Chen, Yu-Wu Wang

光電科技研究所

研究成果: Conference contribution

摘要

We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility -2.4 cm²/Vs was achieved.

原文	English
主出版物標題	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
發行者	Society for Information Display
頁面	905-908
頁數	4
卷	2
ISBN（電子）	9781510845510
出版狀態	Published - 2016 一月 1
事件	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan 持續時間: 2016 十二月 7 → 2016 十二月 9

Other

Other	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
國家	Japan
城市	Fukuoka
期間	16-12-07 → 16-12-09

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Human-Computer Interaction
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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引用此

@inproceedings{66ff954a17a34466a30cbd694ac54aad,

title = "The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping.",

abstract = "We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility -2.4 cm2/Vs was achieved.",

author = "He, {Nai Xiang} and Chen, {Wei Xiang} and Chen, {Wei An} and Chen, {Shi Jie} and Yu-Wu Wang",

year = "2016",

month = jan,

day = "1",

language = "English",

volume = "2",

pages = "905--908",

booktitle = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",

publisher = "Society for Information Display",

address = "United States",

note = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 ; Conference date: 07-12-2016 Through 09-12-2016",

}

He, NX, Chen, WX, Chen, WA, Chen, SJ & Wang, Y-W 2016, The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. 於 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. 卷 2, Society for Information Display, 頁 905-908, 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, Fukuoka, Japan, 16-12-07.

The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. / He, Nai Xiang; Chen, Wei Xiang; Chen, Wei An; Chen, Shi Jie; Wang, Yu-Wu.

23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. 卷 2 Society for Information Display, 2016. p. 905-908.

研究成果: Conference contribution

TY - GEN

T1 - The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping.

AU - He, Nai Xiang

AU - Chen, Wei Xiang

AU - Chen, Wei An

AU - Chen, Shi Jie

AU - Wang, Yu-Wu

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility -2.4 cm2/Vs was achieved.

AB - We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility -2.4 cm2/Vs was achieved.

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EP - 908

BT - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016

PB - Society for Information Display

T2 - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016

Y2 - 7 December 2016 through 9 December 2016

ER -