THE DEVELOPMENT of PERPENDICULAR MAGNETIC TUNNELING JUNCTIONS

Huang Ming Lee, Yen Chi Lee, Hao Hsuan Chen, Lance Horng, Jong Ching Wu, Ching Ming Lee, Te Ho Wu, Gung Chern

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

This paper reviews the progress made over the last few years in understanding the development of perpendicular magnetic tunneling junctions (pMTJs). The material systems for making pMTJs, including rare-earth/transition metal alloys, L10-ordered (Co, Fe)-Pt alloys, Co/(Pd, Pt) multilayers, and CoFeB-MgO crystallized structures, are briefly introduced. The fabrication processes of the MTJ devices are focused on, consisting of open-trench, etch-back and self-aligned techniques. The authors also propose a spin-torque nano-oscillator based on pMTJ, for application in GHz range telecommunications.

原文English
文章編號1230002
期刊SPIN
2
發行號1
DOIs
出版狀態Published - 2012 三月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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