TY - JOUR
T1 - THE DEVELOPMENT of PERPENDICULAR MAGNETIC TUNNELING JUNCTIONS
AU - Lee, Huang Ming
AU - Lee, Yen Chi
AU - Chen, Hao Hsuan
AU - Horng, Lance
AU - Wu, Jong Ching
AU - Lee, Ching Ming
AU - Wu, Te Ho
AU - Chern, Gung
PY - 2012/3/1
Y1 - 2012/3/1
N2 - This paper reviews the progress made over the last few years in understanding the development of perpendicular magnetic tunneling junctions (pMTJs). The material systems for making pMTJs, including rare-earth/transition metal alloys, L10-ordered (Co, Fe)-Pt alloys, Co/(Pd, Pt) multilayers, and CoFeB-MgO crystallized structures, are briefly introduced. The fabrication processes of the MTJ devices are focused on, consisting of open-trench, etch-back and self-aligned techniques. The authors also propose a spin-torque nano-oscillator based on pMTJ, for application in GHz range telecommunications.
AB - This paper reviews the progress made over the last few years in understanding the development of perpendicular magnetic tunneling junctions (pMTJs). The material systems for making pMTJs, including rare-earth/transition metal alloys, L10-ordered (Co, Fe)-Pt alloys, Co/(Pd, Pt) multilayers, and CoFeB-MgO crystallized structures, are briefly introduced. The fabrication processes of the MTJ devices are focused on, consisting of open-trench, etch-back and self-aligned techniques. The authors also propose a spin-torque nano-oscillator based on pMTJ, for application in GHz range telecommunications.
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U2 - 10.1142/S2010324712300022
DO - 10.1142/S2010324712300022
M3 - Article
AN - SCOPUS:84904348303
VL - 2
JO - SPIN
JF - SPIN
SN - 2010-3247
IS - 1
M1 - 1230002
ER -