The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics

Yu-Wu Wang, Po Hsiang Fang, Ang Chung Cheng, Wei-Chia Su, Po Ren Lin

研究成果: Conference contribution

摘要

We report the impact of lithium doping to ZnO/InZnO thin film transistors' electrical and optical characteristics. A best device with mobility ∼0.94 cm2/vs, and an on/off current ratio over 106 were achieved. Further, the high ionization energy of lithium (5.39eV) led the transistor stabilizer than which without lithium doping.

原文English
主出版物標題Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
頁面391-394
頁數4
出版狀態Published - 2012 十二月 1
事件19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
持續時間: 2012 十二月 42012 十二月 7

出版系列

名字Proceedings of the International Display Workshops
1
ISSN(列印)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
國家Japan
城市Kyoto
期間12-12-0412-12-07

指紋

Thin film transistors
Lithium
Doping (additives)
Ionization potential
Transistors
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

引用此文

Wang, Y-W., Fang, P. H., Cheng, A. C., Su, W-C., & Lin, P. R. (2012). The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics. 於 Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (頁 391-394). (Proceedings of the International Display Workshops; 卷 1).
Wang, Yu-Wu ; Fang, Po Hsiang ; Cheng, Ang Chung ; Su, Wei-Chia ; Lin, Po Ren. / The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics. Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. 頁 391-394 (Proceedings of the International Display Workshops).
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abstract = "We report the impact of lithium doping to ZnO/InZnO thin film transistors' electrical and optical characteristics. A best device with mobility ∼0.94 cm2/vs, and an on/off current ratio over 106 were achieved. Further, the high ionization energy of lithium (5.39eV) led the transistor stabilizer than which without lithium doping.",
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Wang, Y-W, Fang, PH, Cheng, AC, Su, W-C & Lin, PR 2012, The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics. 於 Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, 卷 1, 頁 391-394, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 12-12-04.

The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics. / Wang, Yu-Wu; Fang, Po Hsiang; Cheng, Ang Chung; Su, Wei-Chia; Lin, Po Ren.

Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 391-394 (Proceedings of the International Display Workshops; 卷 1).

研究成果: Conference contribution

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Wang Y-W, Fang PH, Cheng AC, Su W-C, Lin PR. The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics. 於 Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 391-394. (Proceedings of the International Display Workshops).