The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics

Yu-Wu Wang, Po Hsiang Fang, Ang Chung Cheng, Wei-Chia Su, Po Ren Lin

研究成果: Conference contribution

摘要

We report the impact of lithium doping to ZnO/InZnO thin film transistors' electrical and optical characteristics. A best device with mobility ∼0.94 cm2/vs, and an on/off current ratio over 106 were achieved. Further, the high ionization energy of lithium (5.39eV) led the transistor stabilizer than which without lithium doping.

原文English
主出版物標題Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
頁面391-394
頁數4
出版狀態Published - 2012 十二月 1
事件19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
持續時間: 2012 十二月 42012 十二月 7

出版系列

名字Proceedings of the International Display Workshops
1
ISSN(列印)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
國家Japan
城市Kyoto
期間12-12-0412-12-07

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

指紋 深入研究「The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics」主題。共同形成了獨特的指紋。

  • 引用此

    Wang, Y-W., Fang, P. H., Cheng, A. C., Su, W-C., & Lin, P. R. (2012). The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics. 於 Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (頁 391-394). (Proceedings of the International Display Workshops; 卷 1).