Temperature dependence of quantized states in an In0.86Ga0.14As0.3p0.7/Inp quantum well heterostructure

C. F. Li, D. Y. Lin, Y. S. Huang, Y. F. Chen, K. K. Tiong

研究成果: Article

20 引文 斯高帕斯(Scopus)


Piezoreflectance (PzR) and contactless electroreflectance (CER) measurements of an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure as a function of temperature in the range of 20-300 K have been carried out. A careful analysis of the PzR and CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The parameters that describe the temperature dependence of EmnH(L) are evaluated. A detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The temperature dependence of the linewidth of 11H exciton is evaluated and compared with that of the bulk material.

頁(從 - 到)400-405
期刊Journal of Applied Physics
出版狀態Published - 1997 一月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

指紋 深入研究「Temperature dependence of quantized states in an In<sub>0.86</sub>Ga<sub>0.14</sub>As<sub>0.3</sub>p<sub>0.7</sub>/Inp quantum well heterostructure」主題。共同形成了獨特的指紋。

  • 引用此