Temperature dependence of quantized states in a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure

Der Yuh Lin, Chi Feng Li, Ying Sheng Huang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The piezoreflectance (PzR) measurements of a GaAs/Al0.23Ga0.77 As asymmetric triangular quantum well heterostructure as a function of temperature in the range of 20 to 300 K have been carried out. The structure was fabricated by molecular beam epitaxy using a digital alloy compositional grading method. A comparison of the PzR and photoreflectance spectra allows us to identify the features associated with the heavy- and light-hole valence bands unambiguously. The detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The anomalous behavior of the temperature dependence of the linewidth of 11H excitonic feature is discussed.

原文English
頁(從 - 到)3576-3582
頁數7
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
發行號6 SUPPL. A
DOIs
出版狀態Published - 1996 六月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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