Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

Cheng Chun Hung, Yow-Jon Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si([sbnd]OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2–based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

原文English
頁(從 - 到)141-145
頁數5
期刊Chemical Physics Letters
691
DOIs
出版狀態Published - 2018 一月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

指紋 深入研究「Surface properties of SiO<sub>2</sub> with and without H<sub>2</sub>O<sub>2</sub> treatment as gate dielectrics for pentacene thin-film transistor applications」主題。共同形成了獨特的指紋。

引用此