Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN

Yow Jon Lin, Zhi Long Wang, Hsing Cheng Chang

研究成果: Article

20 引文 斯高帕斯(Scopus)

摘要

The effects of (NH4)2Sx treatment on the p-type GaN (p-GaN) were discussed using the photoluminescence and photoelectron spectroscopy measurements. It was found that the reduction of the surface state, related to the nitrogen-vacancy defects on the p-GaN surface, led to reduction in the surface band bending by 0.25 eV. The analysis showed that the intensity of the 2.8-eV photoluminescence band depended upon the amount of nitrogen vacancy of p-GaN.

原文English
頁(從 - 到)5183-5185
頁數3
期刊Applied Physics Letters
81
發行號27
DOIs
出版狀態Published - 2002 十二月 30

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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