Study of sense current effect on magnetization switching behavior from anomalous Hall effect in TbFeCo thin films

Ramesh Chandra Bhatt, Lin Xiu Ye, Yi Jyun Zou, Sheng Zhe Ciou, Jong Ching Wu, Te ho Wu

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

The control of magnetic properties by electric current in nanoscale devices is critical for advanced applications of spintronics. Here, we study the anomalous Hall effect in amorphous TbFeCo/Ta/MgO structure for various dc sense currents using the Hall bar pattern. The aspect ratio of the Hall bar structure is changed by simply interchanging the current and voltage terminals. It is found that the increase in the sense current decreases both the anomalous Hall resistivity and the coercivity in the TbFeCo. The decreasing trend of resistivity and coercivity with sense current is unusual which is explained on the basis of Joule heating and spin-orbit torque. In addition, a simple analysis is performed to relate the magnetization switching speed as a function of dc sense current.

原文English
文章編號165688
期刊Journal of Magnetism and Magnetic Materials
492
DOIs
出版狀態Published - 2019 十二月 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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