Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

In this letter, the effect of slightly-doped step-like electron-blocking layer (EBL) in blue InGaN multiple-quantum well light-emitting diodes is numerically investigated. Results from the simulation analyses indicate that under a low p-doping concentration, the structure with step-like EBL has better optical performance than its counterpart with conventional AlGaN EBL because of the appropriately modified energy band diagrams, which are favorable for the injection of holes and confinement of electrons.

原文English
文章編號6256695
頁(從 - 到)1506-1508
頁數3
期刊IEEE Photonics Technology Letters
24
發行號17
DOIs
出版狀態Published - 2012 八月 17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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