Size Effect on Interlayer Coupling and Magnetoresistance Oscillation of Magnetic Tunnel Junction Embedded with Iron Nanoparticles

Yen Chi Lee, Bipul Das, Te Ho Wu, Lance Horng, Jong-Ching Wu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Here, we investigate the size effect of perpendicular-Anisotropic double-barrier magnetic tunnel junction (MTJ) devices embedded with iron nanoparticles. A sputtering system in conjunction with the postannealing process is employed to prepare the sheet film and standard lithography techniques followed by the ion etching technique are used to fabricate the micrometer to submicrometer MTJ devices. A strong ferromagnetic coupling is observed as we reduce the size of the device to submicrometer scale, which is due to the reduction of magnetostatic energy of the device. Furthermore, a magnetoresistance (MR) oscillation is observed at room temperature while reducing the size of the device. MR peaks at low bias fields are believed to have magnon contributions, whereas the peaks observed at higher bias fields are responsible for phonon-Assisted tunneling. Zero-bias anomalies are also observed and are more prominent in antiparallel states of the devices.

原文English
文章編號7114315
期刊IEEE Transactions on Magnetics
51
發行號11
DOIs
出版狀態Published - 2015 十一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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