Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased T0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.
|頁（從 - 到）||7916-7918|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2005 十一月 9|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)