Simulation of high-efficiency GaN/InGaN p-i-n solar cell with suppressed polarization and barrier effects

Jih-Yuan Chang, Shih Hsun Yen, Yi An Chang, Yen-Kuang Kuo

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

The photovoltaic characteristics of Ga-face GaN/InGaN p-i-n solar cells are investigated numerically. The severe polarization and barrier effects induced by the GaN/InGaN hetero-interfaces are demonstrated to be detrimental for the carrier collection. The conversion efficiency could be degraded to be out of application when the degree of polarization and/or indium composition are high. To efficiently eliminate both critical issues, the solar cell structure with appropriate band engineering is introduced. In the proposed structure, the photovoltaic characteristics not only show high-grade performance but also become insensitive to the degree of polarization, even in the situation of high indium composition.

原文English
文章編號6334407
頁(從 - 到)17-23
頁數7
期刊IEEE Journal of Quantum Electronics
49
發行號1
DOIs
出版狀態Published - 2013 一月 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

指紋 深入研究「Simulation of high-efficiency GaN/InGaN p-i-n solar cell with suppressed polarization and barrier effects」主題。共同形成了獨特的指紋。

引用此