Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications

Shin Li Tsai, Jenq Shinn Wu, Hung Ji Lin, Der Yuh Lin, Jin Yao Zheng

研究成果: Conference article

摘要

Optical properties of InGaAsN/AlGaAs metal-semi-conductor-metal photodetectors (MSM-PDs) with a modulation-doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two-dimensional device simulator. Simulation results show that the optimized device structure has a 30-nm-thick cap layer with Nd = 2×1017 cm -3, a 10-nm-thick spacer layer, and 7-μm-wide finger spacing to exhibit the largest photocurrent response and shortest decay response time.

原文English
頁(從 - 到)2167-2169
頁數3
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
5
發行號6
DOIs
出版狀態Published - 2008 十二月 1
事件7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
持續時間: 2007 九月 162007 九月 21

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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