Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography

Yeong-Lin Lai, Edward Y. Chang, Chun Yen Chang, Hung Pin D. Yang, K. Nakamura, S. L. Shy

研究成果: Chapter

摘要

A new fabrication process of T-shaped gates has been developed using a deep-UV/electron-beam/deep-UV (DUV/EB/DUV) tri-layer resist system and electron-beam lithography for the first time. The simple process accomplished a submicron T-shaped gate by a single exposure and a single development step. The narrow/wide/narrow opening of the DUV/EB/DUV resist structure can be accurately controlled by the e-beam dosage and the development conditions. Differences in the sensitivities of the DUV resist and the EB resist were investigated. Due to the lower sensitivity of the adopted DUV resist to the electron beam, the smaller opening of the DUV resist layer was obtained. The higher sensitivity of the EB resist resulted in a wider opening in the middle resist layer. A 0.15-μm-gate-length T-shaped gate can be easily formed by the short-process-time and low-production-cost hybrid DUV/EB/DUV resist approach.

原文English
主出版物標題Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
編輯Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
頁面6347-6695
頁數349
版本12 B
出版狀態Published - 1996 十二月 1
事件Proceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
持續時間: 1996 七月 81996 七月 11

出版系列

名字Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
號碼12 B
35

Other

OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
城市Kyushu, Jpn
期間96-07-0896-07-11

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此

Lai, Y-L., Chang, E. Y., Chang, C. Y., Yang, H. P. D., Nakamura, K., & Shy, S. L. (1996). Simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography. 於 Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, & A. et al (編輯), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (12 B 編輯, 頁 6347-6695). (Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers; 卷 35, 編號 12 B).