Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes

Jian Jhou Zeng, Yow-Jon Lin

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

The current-voltage characteristics of graphene/Si-nanowire (SiNW) arrays/n-type Si Schottky diodes with and without H2O2 treatment were measured in the temperature range of -150 ∼ 150°C. The forward-bias current-voltage characteristics were analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decreased temperatures. Such behavior is attributed to barrier inhomogeneities. It is shown that both Schottky barrier inhomogeneity and the T0 effect are affected by H2O 2 treatment, implying that charge traps in the SiNWs have a noticeable effect on Schottky barrier inhomogeneity for graphene/SiNWs/n-type Si diodes.

原文English
文章編號133506
期刊Applied Physics Letters
104
發行號13
DOIs
出版狀態Published - 2014 三月 31

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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