Resonant tunneling of electrons from quantized levels in the accumulation layer of double-barrier heterostructures

J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, D. C. Liou

研究成果: Article

19 引文 斯高帕斯(Scopus)

摘要

We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.

原文English
頁(從 - 到)2311-2312
頁數2
期刊Applied Physics Letters
57
發行號22
DOIs
出版狀態Published - 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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