Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications

The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n⁺-Si), Au/pentacene/Si nanowires (SiNWs)/n ⁺-Si, and Au/pentacene/H₂O₂-treated SiNWs/n⁺-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n⁺-Si devices show hysteresis behavior. H₂O₂ treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n⁺-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices.