Reduction of stacking fault density in m -plane GaN grown on SiC

Y. S. Cho, Q. Sun, I. H. Lee, Tsung-Shine Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, S. Wang

研究成果: Article

50 引文 (Scopus)

摘要

We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

原文English
文章編號111904
期刊Applied Physics Letters
93
發行號11
DOIs
出版狀態Published - 2008 九月 29

指紋

crystal defects
quantum wells
nucleation
transmission electron microscopy
anisotropy
curves
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

Cho, Y. S., Sun, Q., Lee, I. H., Ko, T-S., Yerino, C. D., Han, J., ... Wang, S. (2008). Reduction of stacking fault density in m -plane GaN grown on SiC. Applied Physics Letters, 93(11), [111904]. https://doi.org/10.1063/1.2985816
Cho, Y. S. ; Sun, Q. ; Lee, I. H. ; Ko, Tsung-Shine ; Yerino, C. D. ; Han, J. ; Kong, B. H. ; Cho, H. K. ; Wang, S. / Reduction of stacking fault density in m -plane GaN grown on SiC. 於: Applied Physics Letters. 2008 ; 卷 93, 編號 11.
@article{1d557c54eb764588bf37fd236d587c5e,
title = "Reduction of stacking fault density in m -plane GaN grown on SiC",
abstract = "We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.",
author = "Cho, {Y. S.} and Q. Sun and Lee, {I. H.} and Tsung-Shine Ko and Yerino, {C. D.} and J. Han and Kong, {B. H.} and Cho, {H. K.} and S. Wang",
year = "2008",
month = "9",
day = "29",
doi = "10.1063/1.2985816",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Cho, YS, Sun, Q, Lee, IH, Ko, T-S, Yerino, CD, Han, J, Kong, BH, Cho, HK & Wang, S 2008, 'Reduction of stacking fault density in m -plane GaN grown on SiC', Applied Physics Letters, 卷 93, 編號 11, 111904. https://doi.org/10.1063/1.2985816

Reduction of stacking fault density in m -plane GaN grown on SiC. / Cho, Y. S.; Sun, Q.; Lee, I. H.; Ko, Tsung-Shine; Yerino, C. D.; Han, J.; Kong, B. H.; Cho, H. K.; Wang, S.

於: Applied Physics Letters, 卷 93, 編號 11, 111904, 29.09.2008.

研究成果: Article

TY - JOUR

T1 - Reduction of stacking fault density in m -plane GaN grown on SiC

AU - Cho, Y. S.

AU - Sun, Q.

AU - Lee, I. H.

AU - Ko, Tsung-Shine

AU - Yerino, C. D.

AU - Han, J.

AU - Kong, B. H.

AU - Cho, H. K.

AU - Wang, S.

PY - 2008/9/29

Y1 - 2008/9/29

N2 - We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

AB - We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

UR - http://www.scopus.com/inward/record.url?scp=52349092420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52349092420&partnerID=8YFLogxK

U2 - 10.1063/1.2985816

DO - 10.1063/1.2985816

M3 - Article

AN - SCOPUS:52349092420

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111904

ER -