Reduction of stacking fault density in m -plane GaN grown on SiC

Y. S. Cho, Q. Sun, I. H. Lee, T. S. Ko, C. D. Yerino, J. Han, B. H. Kong, H. K. Cho, S. Wang

研究成果: Article

52 引文 斯高帕斯(Scopus)

摘要

We report the reduction in basal-plane stacking faults (BSFs) in m -plane GaN grown on m -plane SiC. The origin of BSFs is linked to heteronucleation of m -plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm-1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m -plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaNGaN quantum well emission are presented.

原文English
文章編號111904
期刊Applied Physics Letters
93
發行號11
DOIs
出版狀態Published - 2008 九月 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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  • 引用此

    Cho, Y. S., Sun, Q., Lee, I. H., Ko, T. S., Yerino, C. D., Han, J., Kong, B. H., Cho, H. K., & Wang, S. (2008). Reduction of stacking fault density in m -plane GaN grown on SiC. Applied Physics Letters, 93(11), [111904]. https://doi.org/10.1063/1.2985816