Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers

Jih-Yuan Chang, Yi An Chang, Tsun Hsin Wang, Fang Ming Chen, Bo Ting Liou, Yen-Kuang Kuo

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The phenomenon of efficiency droop in blue InGaN light-emitting diodes (LEDs) is studied numerically. Simulation results indicate that the severe Auger recombination is one critical mechanism corresponding to the degraded efficiency under high current injection. To solve this issue, LED structure with thin AlGaN barriers and without the use of an AlGaN EBL is proposed. The purpose of the strain-compensation AlGaN barriers is to mitigate the strain accumulation in a multiquantum well (MQW) active region in this thin-barrier structure. With the proposed LED structure, the hole injection and transportation of the MQWactive region are largely improved. The carriers can thus distribute/disperse much more uniformly in QWs, and the Auger recombination is suppressed accordingly. The internal quantum efficiency and the efficiency droop are therefore efficiently improved.

原文English
頁(從 - 到)497-500
頁數4
期刊Optics Letters
39
發行號3
DOIs
出版狀態Published - 2014 二月 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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