Quantum effect of the source electrode on electrical and optical characteristics of double-barrier resonant tunneling structures

J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

研究成果: Conference article

2 引文 斯高帕斯(Scopus)

摘要

The electrical and optical characteristics of the DBRTS (double-barrier resonant tunneling structure) with undoped electrodes were studied. The quantum size effect in the accumulation layer due to the large band bending causes irregular features in device characteristics. Additional kinks in the I-V curve were observed. The two-dimensionality of the source electrons is believed to account for the excellent NDR performance obtained in these devices. In field-induced PL (photoluminescence) measurements, the PL intensity peaks at the occurrence of the kink, but not at the peak-current voltage. This provides optical evidence of the correlation between the kink and the first excited quantum state in the accumulation layer. The PL intensity as a function of bias is discussed.

原文English
頁(從 - 到)343-346
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1990 十二月 1
事件1990 International Electron Devices Meeting - San Francisco, CA, USA
持續時間: 1990 十二月 91990 十二月 12

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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