Preparation and characterization of Cu(In,Ga)Se₂ thin film solar cell by printing technique with powders of quaternary alloy and NaF

This study prepared Cu(In,Ga)Se₂ (CIGS) thin films on bi-layer Mo coated soda-lime glass, by printing with mixed powders of CIGS quaternary alloy (average partial size of 680 nm) and NaF. A single-stage annealing process was performed to form a CIGS chalcopyrite phase. Experimental results show stoichiometric ratios of Cu/(In+Ga) = 0.94 and Ga/(In+Ga) = 0.26 in the CIGS film. The resistivity of the sample was 12.69 Ω cm, with a carrier concentration of 9.34 × 10¹⁶ cm^-3, and mobility of 5.27 cm² V^-1 s^-1. The CIGS film exhibited p-type conductivity. The incorporation of 1 wt% NaF in the CIGS powder produced a chalcopyrite structure with the best crystalinity. Raman analysis identified a number of phases, including CuInSe₂ and CuIn₃Se ₅. The CIGS solar cells with AZO/i-ZnO/CdS/CIGS/Mo/soda-lime glass structure were fabricated. The CIGS thin film solar cells conversion efficiency of 1.23 % on 1 × 1.5 cm².