Power performance enhancement of metamorphic In0.3Al 0.7As/In0.45Ga0.55As HEMTs using pseudomorphic channel design

Cheng Kuo Lin, Jing Chang Wu, Yi Jen Chan, Jenq Shinn Wu, Yung Chung Pan, Chung Chih Tsai, Jiun Tsuen Lai

研究成果: Conference article

摘要

In this study, we inserted an In0.45Ga0.55As pseudomorphic channel inside the wide bandgap In0.3Al0.7As layer on GaAs substrates to improve carrier confinement and device microwave power performance, as compared with the In0.3Ga0.7As lattice matched ones. The rf output power and power-added efficiency increases from 498 mW/mm to 610 mW/mm, and 37% to 43% under a 2.4 GHz operation for a 1-μm gatelength device.

原文English
頁(從 - 到)287-290
頁數4
期刊Institute of Physics Conference Series
184
出版狀態Published - 2005 十二月 1
事件31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
持續時間: 2004 九月 122004 十二月 16

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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