摘要
The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53% in light output power is achieved for the proposed LED structure.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 221-225 |
| 頁數 | 5 |
| 期刊 | Superlattices and Microstructures |
| 卷 | 93 |
| DOIs | |
| 出版狀態 | Published - 2016 五月 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
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引用此
Kuo, Y-K., Chen, F. M., Chang, J-Y., & Lin, B. C. (2016). Polarization-matched quaternary superlattice electron blocking layer in blue InGaN light-emitting diodes. Superlattices and Microstructures, 93, 221-225. https://doi.org/10.1016/j.spmi.2015.11.024