TY - JOUR
T1 - Polarization-matched quaternary superlattice electron blocking layer in blue InGaN light-emitting diodes
AU - Kuo, Yen-Kuang
AU - Chen, Fang Ming
AU - Chang, Jih-Yuan
AU - Lin, Bing Cheng
PY - 2016/5/1
Y1 - 2016/5/1
N2 - The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53% in light output power is achieved for the proposed LED structure.
AB - The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53% in light output power is achieved for the proposed LED structure.
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U2 - 10.1016/j.spmi.2015.11.024
DO - 10.1016/j.spmi.2015.11.024
M3 - Article
AN - SCOPUS:84962773320
VL - 93
SP - 221
EP - 225
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
ER -