Polarization engineering in III-nitride based ultraviolet light-emitting diodes

Yu Rui Lin; Bo Ting Liou; Jih Yuan Chang; Yen Kuang Kuo

doi:10.1117/12.2003779

Polarization engineering in III-nitride based ultraviolet light-emitting diodes

Yu Rui Lin, Bo Ting Liou, Jih Yuan Chang, Yen Kuang Kuo

研究成果: Conference contribution

4 引文斯高帕斯（Scopus）

摘要

In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.

原文	English
主出版物標題	Physics and Simulation of Optoelectronic Devices XXI
DOIs	https://doi.org/10.1117/12.2003779
出版狀態	Published - 2013 五月 29
事件	Physics and Simulation of Optoelectronic Devices XXI - San Francisco, CA, United States 持續時間: 2013 二月 4 → 2013 二月 7

出版系列

名字	Proceedings of SPIE - The International Society for Optical Engineering
卷	8619
ISSN（列印）	0277-786X

Other

Other	Physics and Simulation of Optoelectronic Devices XXI
國家	United States
城市	San Francisco, CA
期間	13-02-04 → 13-02-07

指紋

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

引用此

Lin, Y. R., Liou, B. T., Chang, J. Y., & Kuo, Y. K. (2013). Polarization engineering in III-nitride based ultraviolet light-emitting diodes. 於 Physics and Simulation of Optoelectronic Devices XXI [86191V] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8619). https://doi.org/10.1117/12.2003779

@inproceedings{cee1750a5cbd41ffb11c0103cf09e52b,

title = "Polarization engineering in III-nitride based ultraviolet light-emitting diodes",

abstract = "In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.",

author = "Lin, {Yu Rui} and Liou, {Bo Ting} and Chang, {Jih Yuan} and Kuo, {Yen Kuang}",

year = "2013",

month = "5",

day = "29",

doi = "10.1117/12.2003779",

language = "English",

isbn = "9780819493880",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Physics and Simulation of Optoelectronic Devices XXI",

note = "Physics and Simulation of Optoelectronic Devices XXI ; Conference date: 04-02-2013 Through 07-02-2013",

}

Lin, YR, Liou, BT, Chang, JY & Kuo, YK 2013, Polarization engineering in III-nitride based ultraviolet light-emitting diodes. 於 Physics and Simulation of Optoelectronic Devices XXI., 86191V, Proceedings of SPIE - The International Society for Optical Engineering, 卷 8619, Physics and Simulation of Optoelectronic Devices XXI, San Francisco, CA, United States, 13-02-04. https://doi.org/10.1117/12.2003779

TY - GEN

T1 - Polarization engineering in III-nitride based ultraviolet light-emitting diodes

AU - Lin, Yu Rui

AU - Liou, Bo Ting

AU - Chang, Jih Yuan

AU - Kuo, Yen Kuang

PY - 2013/5/29

Y1 - 2013/5/29

N2 - In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.

AB - In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.

UR - http://www.scopus.com/inward/record.url?scp=84878130078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878130078&partnerID=8YFLogxK

U2 - 10.1117/12.2003779

DO - 10.1117/12.2003779

M3 - Conference contribution

AN - SCOPUS:84878130078

SN - 9780819493880

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics and Simulation of Optoelectronic Devices XXI

T2 - Physics and Simulation of Optoelectronic Devices XXI

Y2 - 4 February 2013 through 7 February 2013

ER -

存取文件

10.1117/12.2003779