Polarization engineering in III-nitride based ultraviolet light-emitting diodes

Yu Rui Lin, Bo Ting Liou, Jih Yuan Chang, Yen Kuang Kuo

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.

原文English
主出版物標題Physics and Simulation of Optoelectronic Devices XXI
DOIs
出版狀態Published - 2013 五月 29
事件Physics and Simulation of Optoelectronic Devices XXI - San Francisco, CA, United States
持續時間: 2013 二月 42013 二月 7

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8619
ISSN(列印)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XXI
國家United States
城市San Francisco, CA
期間13-02-0413-02-07

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此

Lin, Y. R., Liou, B. T., Chang, J. Y., & Kuo, Y. K. (2013). Polarization engineering in III-nitride based ultraviolet light-emitting diodes. 於 Physics and Simulation of Optoelectronic Devices XXI [86191V] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8619). https://doi.org/10.1117/12.2003779