Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells

Yen Kuang Kuo, Han Wei Lin, Jih Yuan Chang, Yu Han Chen, Yi An Chang

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

原文English
文章編號6230603
頁(從 - 到)1159-1161
頁數3
期刊IEEE Electron Device Letters
33
發行號8
DOIs
出版狀態Published - 2012 七月 9

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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