Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

原文English
頁(從 - 到)1659-1660
頁數2
期刊Electronics Letters
25
發行號24
DOIs
出版狀態Published - 1989 九月 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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