Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee; K. H. Chang; D. G. Liu; J. S. Wu

doi:10.1049/el:19891112

Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu

電子工程學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

原文	English
頁（從 - 到）	1659-1660
頁數	2
期刊	Electronics Letters
卷	25
發行號	24
DOIs	https://doi.org/10.1049/el:19891112
出版狀態	Published - 1989 九月 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19891112

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引用此

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abstract = "Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.",

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