Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer

Cheng Kuo Lin, Jing Chang Wu, Wen Kai Wang, Yi Jen Chan, Jenq Shinn Wu, Yung Chung Pan, Chung Chih Tsai, Jiun Tsuen Lai

研究成果: Article

摘要

We have developed 1-μm gate-length the devices of In0.65 Ga0.65 As pseudomorphic channel (PC) on the In0.5 Al0.5 As metamorphic buffer layer to improve the device performance, as compared with the In0.5 Ga0.5 As lattice matched ones. The dc maximum drain-to-source current and transconductance enhances from 340 to 490 mA/mm and from 450 to 670 mS/mm. The RF current gain cut-off frequency and maximum oscillation frequency increases from 22 to 31 GHz and from 42 to 58 GHz, respectively. The extrinsic total delay times are quantitatively investigated, and the effective velocity of electrons improves from 1.8 × 107 cm/s to 2.3 × 107 cm/s by this In0.65 Ga0.35 As PC.

原文English
頁(從 - 到)1214-1217
頁數4
期刊IEEE Transactions on Electron Devices
51
發行號7
DOIs
出版狀態Published - 2004 七月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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