Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy

Ming Chin Kuo, Kuan Cheng Chiu, Tsai Hsuai Shih, Yi Jen Lai, Chu Shou Yang, Wei Kuo Chen, Der San Chuu, Ming Chih Lee, Wu Ching Chou, Syang Ywan Jeng, Yu Tai Shih, Wen Ho Lan

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-<E b>/kT)/. The impurity binding energy, <Eb>, was found to decrease as the Cd composition increases.

原文English
頁(從 - 到)5145-5150
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
發行號8 A
DOIs
出版狀態Published - 2004 八月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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