Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition

Tsung-Shine Ko, T. C. Lu, L. F. Zhuo, W. L. Wang, M. H. Liang, H. C. Kuo, S. C. Wang, Li Chang, Der-Yuh Lin

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

We reported optical properties of a -plane ZnO/ZnMgO multiple quantum wells (MQWs) structure grown by the pulse laser deposition system. The emission peak energy of a -plane ZnO/ZnMgO MQWs kept invariant in the power-dependent photoluminescence (PL) measurement, indicating the nonpolar characteristics due to the lack of built-in electric fields. Large exciton binding energy of 68 meV was deduced and no apparent S-curve appeared in temperature-dependent PL results, demonstrating less carrier localization effect in a -plane ZnO/ZnMgO MQWs. Large difference in electronic transition levels of 45 meV due to the valence band splitting was observed in the polarization dependent absorption spectrum. Furthermore, the high degree of polarization of 92% and 56% at 20 and 300 K in PL emission of a -plane ZnO/ZnMgO MQWs were obtained.

原文English
文章編號073504
期刊Journal of Applied Physics
108
發行號7
DOIs
出版狀態Published - 2010 十月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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