Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition

Tsung-Shine Ko; T. C. Lu; L. F. Zhuo; W. L. Wang; M. H. Liang; H. C. Kuo; S. C. Wang; Li Chang; Der-Yuh Lin

doi:10.1063/1.3488898

Optical characteristics of a-plane ZnO/Zn_0.8Mg_0.2O multiple quantum wells grown by pulsed laser deposition

Tsung-Shine Ko, T. C. Lu, L. F. Zhuo, W. L. Wang, M. H. Liang, H. C. Kuo, S. C. Wang, Li Chang, Der-Yuh Lin

電子工程學系

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摘要

We reported optical properties of a -plane ZnO/ZnMgO multiple quantum wells (MQWs) structure grown by the pulse laser deposition system. The emission peak energy of a -plane ZnO/ZnMgO MQWs kept invariant in the power-dependent photoluminescence (PL) measurement, indicating the nonpolar characteristics due to the lack of built-in electric fields. Large exciton binding energy of 68 meV was deduced and no apparent S-curve appeared in temperature-dependent PL results, demonstrating less carrier localization effect in a -plane ZnO/ZnMgO MQWs. Large difference in electronic transition levels of 45 meV due to the valence band splitting was observed in the polarization dependent absorption spectrum. Furthermore, the high degree of polarization of 92% and 56% at 20 and 300 K in PL emission of a -plane ZnO/ZnMgO MQWs were obtained.

原文	English
文章編號	073504
期刊	Journal of Applied Physics
卷	108
發行號	7
DOIs	https://doi.org/10.1063/1.3488898
出版狀態	Published - 2010 十月 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3488898

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title = "Optical characteristics of a-plane ZnO/Zn0.8Mg0.2O multiple quantum wells grown by pulsed laser deposition",

abstract = "We reported optical properties of a -plane ZnO/ZnMgO multiple quantum wells (MQWs) structure grown by the pulse laser deposition system. The emission peak energy of a -plane ZnO/ZnMgO MQWs kept invariant in the power-dependent photoluminescence (PL) measurement, indicating the nonpolar characteristics due to the lack of built-in electric fields. Large exciton binding energy of 68 meV was deduced and no apparent S-curve appeared in temperature-dependent PL results, demonstrating less carrier localization effect in a -plane ZnO/ZnMgO MQWs. Large difference in electronic transition levels of 45 meV due to the valence band splitting was observed in the polarization dependent absorption spectrum. Furthermore, the high degree of polarization of 92% and 56% at 20 and 300 K in PL emission of a -plane ZnO/ZnMgO MQWs were obtained.",

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AU - Ko, Tsung-Shine

AU - Lu, T. C.

AU - Zhuo, L. F.

AU - Wang, W. L.

AU - Liang, M. H.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Chang, Li

AU - Lin, Der-Yuh

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