Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

Hung Pin Hsu, Der Yuh Lin, Guan Ting Lu, Tsung Shine Ko, Hone Zern Chen

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current–voltage (I–V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.

原文English
頁(從 - 到)433-440
頁數8
期刊Materials Chemistry and Physics
220
DOIs
出版狀態Published - 2018 十二月 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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