Optical and electrical properties of MoS2 and Fe-doped MoS 2

Song Yu Wang, Tsung Shine Ko, Cheng Ching Huang, Der Yuh Lin, Ying Sheng Huang

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

We prepared undoped and Fe-doped MoS2 layered crystals using a chemical vapor transport method to compare their optical and electrical properties. Optical behaviors of carrier transitions were observed successfully in both undoped and Fe-doped MoS2 samples using reflectance and piezoreflectance. Frequency-dependent photoconductivity (PC) measurements reveal an additional deep Fe doping level for the Fe-doped MoS2 sample. In addition, a longer carrier lifetime was calculated for the Fe-doped MoS2 sample than for the undoped MoS2 sample through PC analysis. Hall measurements were also performed for both samples and indicated that the Fe-doped MoS2 sample exhibited a higher carrier concentration and a lower mobility owing to the effect of Fe dopants. Furthermore, both samples were confirmed to have n-type carriers.

原文English
文章編號04EH07
期刊Japanese Journal of Applied Physics
53
發行號4 SPEC. ISSUE
DOIs
出版狀態Published - 2014 四月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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