In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.
|頁（從 - 到）||2510-2514|
|期刊||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版狀態||Published - 2007 十二月 1|
|事件||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
持續時間: 2006 十月 22 → 2006 十月 27
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics