Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

T. S. Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, T. C. Lu, H. C. Kuo, S. C. Wang

研究成果: Conference article

摘要

In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

原文English
頁(從 - 到)2510-2514
頁數5
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
4
發行號7
DOIs
出版狀態Published - 2007 十二月 1
事件International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
持續時間: 2006 十月 222006 十月 27

指紋

metalorganic chemical vapor deposition
nucleation
sapphire
roughness
microscopy
thin films
electronics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

引用此文

Ko, T. S. ; Wang, T. C. ; Chen, H. G. ; Gao, R. C. ; Huang, G. S. ; Lu, T. C. ; Kuo, H. C. ; Wang, S. C. / Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. 於: Physica Status Solidi (C) Current Topics in Solid State Physics. 2007 ; 卷 4, 編號 7. 頁 2510-2514.
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abstract = "In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.",
author = "Ko, {T. S.} and Wang, {T. C.} and Chen, {H. G.} and Gao, {R. C.} and Huang, {G. S.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",
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Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition. / Ko, T. S.; Wang, T. C.; Chen, H. G.; Gao, R. C.; Huang, G. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

於: Physica Status Solidi (C) Current Topics in Solid State Physics, 卷 4, 編號 7, 01.12.2007, p. 2510-2514.

研究成果: Conference article

TY - JOUR

T1 - Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

AU - Ko, T. S.

AU - Wang, T. C.

AU - Chen, H. G.

AU - Gao, R. C.

AU - Huang, G. S.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

AB - In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

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