Numerical study on the influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

The influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells is investigated. Simulation results show that the energy band is tilted into the direction detrimental for carrier collection due to the polarization-induced electric field. When the indium composition of InGaN layer increases, this unfavorable effect becomes more serious which, in turn, deteriorates the device performance. This discovery demonstrates that, besides the issue of crystal quality, the problem caused by the polarization effect needs to be overcome for the development of GaN-based solar cells.

原文English
文章編號5773076
頁(從 - 到)937-939
頁數3
期刊IEEE Electron Device Letters
32
發行號7
DOIs
出版狀態Published - 2011 七月 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

指紋 深入研究「Numerical study on the influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells」主題。共同形成了獨特的指紋。

引用此