Numerical study on optimization of active regions for 1.3 μm AlGaInAs and InGaAsN material systems

Yen Kuang Kuo, Shang Wei Hsieh, Hsiu Fen Chen

研究成果: Article

1 引文 (Scopus)

摘要

The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.

原文English
頁(從 - 到)1588-1590
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號3 A
DOIs
出版狀態Published - 2006 三月 8

指紋

Ridge waveguides
optimization
Lasers
ridges
waveguides
lasers
Stimulated emission
stimulated emission
operating temperature
Optical properties
simulation
Semiconductor materials
slopes
optical properties
Temperature
temperature dependence
Electrons
electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

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abstract = "The peak material gains of 1.3 μm semiconductor material systems are numerically studied with a LASTIP simulation program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85°C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0.36Ga0.64As0.99N 0.01 (6 nm)/GaAs0.99N0.01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.",
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