Numerical study on efficiency droop of blue InGaN light-emitting diodes

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

Specific designs on the band structures near the active region are investigated numerically by using the APSYS simulation program with the purpose to surmount the efficiency droop in the InGaN blue LEDs. Systematic analyses included the energy band diagrams, radiative and SRH recombination rates, distribution of electrons and holes in the active region, and electron overflow. Simulation results show that, with appropriate designs, the efficiency droop may be effectively reduced due to the increase of hole injection efficiency, the enhancement of blocking capability for electrons, or the uniform carrier distribution of carriers in the active region.

原文English
主出版物標題Physics and Simulation of Optoelectronic Devices XIX
DOIs
出版狀態Published - 2011 五月 13
事件Physics and Simulation of Optoelectronic Devices XIX - San Francisco, CA, United States
持續時間: 2011 一月 242011 一月 27

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7933
ISSN(列印)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIX
國家United States
城市San Francisco, CA
期間11-01-2411-01-27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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