摘要
A compositional grading layer between the p-In0.5Ga 0.5P emitter layer and p-In0.5Al0.5P window layer in the p +-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.
原文 | English |
---|---|
文章編號 | 5744095 |
頁(從 - 到) | 822-824 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 23 |
發行號 | 12 |
DOIs | |
出版狀態 | Published - 2011 六月 3 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering