Numerical investigation on the structural characteristics of GaN/InGaN solar cells

研究成果: Conference contribution

摘要

In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.

原文English
主出版物標題Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
DOIs
出版狀態Published - 2013 六月 10
事件2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
持續時間: 2013 二月 32013 二月 7

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8620
ISSN(列印)0277-786X

Other

Other2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
國家United States
城市San Francisco, CA
期間13-02-0313-02-07

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此

Kuo, Y-K., Chang, J-Y., & Yen, S. H. (2013). Numerical investigation on the structural characteristics of GaN/InGaN solar cells. 於 Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II [862021] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8620). https://doi.org/10.1117/12.2003716