Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

Yen Kuang Kuo, Jih Yuan Chang, Fang Ming Chen, Ya Hsuan Shih, Hui Tzu Chang

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and I-V characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality.

原文English
文章編號7420540
期刊IEEE Journal of Quantum Electronics
52
發行號4
DOIs
出版狀態Published - 2016 四月

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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