Numerical investigation of high-efficiency InGaN-based multijunction solar cell

Jih Yuan Chang, Shih Hsun Yen, Yi An Chang, Bo Ting Liou, Yen Kuang Kuo

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

A four-junction InGaN-based multijunction solar cell structure is proposed theoretically. The simulation results show that, with the use of appropriately designed compositional grading layers, the performance of InGaN-based multijunction solar cell can be maintained without the cost in performance degradation caused by the polarization-induced electric field and the potential barriers resulting from the heterointerfaces. After the optimization in thicknesses for current matching, a high conversion efficiency of 46.45% can be achieved under 1000-sun AM1.5D illumination, in which the short-circuit current density, open-circuit voltage, and fill factor are 12.2 × 103 mA/cm2, 4.18 V, and 0.77, respectively. The simulation results suggest that, in addition to the detrimental effects caused by the built-in electric polarization and potential barriers, the issue of crystalline quality is another critical factor influencing the performance of multijunction solar cells.

原文English
文章編號6645380
頁(從 - 到)4140-4145
頁數6
期刊IEEE Transactions on Electron Devices
60
發行號12
DOIs
出版狀態Published - 2013 十二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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